Mosfet IRF2807 kênh N (10 con) 75v,82A tại Lotte Market
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Units Conditions V VGS = 250µA V/°C Reference 13 m VGS 4. 6 and 13 VDD = 2. 10 Between lead, nH G from package 7. 0MHz, See Fig. Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time. = 43A, VGS 610 nC di/dt = 100A/µs: Còn hàng
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Giới thiệu Mosfet IRF2807 kênh N (10 con) 75v,82A tại Lotte Market
Max. Units Conditions V VGS = 250µA V/°C Reference 13 m VGS 4.0 V VDS = VGS, 250µA S VDS 43A 25 VDS = 75V, VGS µA 250 VDS = 60V, VGS 150°C 100 VGS nA -100 VGS 29 nC VDS 60V 55 VGS = 10V, See Fig. 6 and 13 VDD = 2.5 VGS = 10V, See Fig. 10 Between lead, nH G from package 7.5 and center of die contact 3820 VGS 0V 610 VDS = 1.0MHz, See Fig. 1280340 mJ IAS = 370µH
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Conditions D MOSFET symbol 82 showing the A G integral reverse 280 S p-n junction diode. = 43A, VGS 610 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)